Download Les phénomènes électromagnétiques by Paul Lorrain; Dale R Corson; François Lorrain; Carlo Rizzo; PDF

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By Paul Lorrain; Dale R Corson; François Lorrain; Carlo Rizzo; Cécile Robilliard

Cet ouvrage traite des principes et des fondements de l'électromagnétisme en étudiant les phénomènes liés. Sa particularité, qui en fait d'ailleurs sa réputation, est d'apporter une connaissance «opérationnelle» au lecteur dans los angeles culture de l'enseignement de Richard Feynman. Ce livre, divisé en 25 chapitres, débute par des rappels mathématiques, qui explicitent les opérateurs vectoriels et l. a. représentation complexe. Vient ensuite l'étude approfondie des champs électriques, de l. a. relativité, des champs magnétiques (le calcul des champs électromagnétiques avec tableurs est abordé), des équations de Maxwell, des ondes et du rayonnement. Chaque chapitre est suivi d'un résumé. Pour guider et aider le lecteur dans sa compréhension, le cours est complété par plus de a hundred exemples et 350 exercices qui explorent les différentes purposes de los angeles théorie. Sommaire : Opérateurs vectoriels; l. a. représentation complexe; Champs électriques : loi de Coulomb et théorème de Gauss; Champs électriques : équations de Poisson et de Laplace. Circuits électriques. Conduction; Champs électriques : les multipôles électriques; Champs électriques : énergie, capacité et forces; Champs électriques : matériaux diélectriques, fees liées et induction électrique D; Champs électriques : diélectriques réels, stipulations de continuité à une interface. Énergie emmagasinée; Champs électriques : les photos. L'équation de Laplace en coordonnées cartésiennes; Champs électriques : L'équation de Laplace en coordonnées sphériques. L'équation de poisson pour E; Relativité : los angeles transformation de Lorentz; Relativité : masse, impulsion, strength et énergie, and so on

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Electron Device 32, 375 (1985) 2. E. Takeda, N. Suzuki, T. Hagiwara, Role of hot-hole injection in hot-carrier effects and the small degraded channel region in MOSFET’S. IEEE Electron Device Lett. 4, 329 (1983) 3. H. Ueba, T. Mii, N. J. Persson, Adsorbate motions induced by inelastic-tunneling current: theoretical scenarios of twoelectron processes. J. Chem. Phys. 123, 084707 (2005) 4. E. Rauch, F. Guarin, G. La Rosa, High-Vgs PFET DC hot-carrier mechanism and its relation to AC degradation. IEEE Trans.

8 V. E. Rauch and F. Guarin Fig. 14 Ratio of Experimental ISG rate at CCS knee to that at base knee. Dashed section is extrapolated below data increase CCS due to an increase in carrier concentration. 7 V, CCS effects may become significantly weaker. 8 V or so) may seriously underestimate the field exposure to hot carrier, which will be dominated by the linear regime. (3) How good is the approximation (Eq. (23)) for the quadratic regime? According to Eq. qmEE VEFF / (28) The numerical integral evaluated for the idealized EDF CCS tail, fI2 , is compared against Sit (2qVEFF ) in Fig.

In fact, the linear regime results in relatively weak hot carrier degradation, and can usually be ignored for evaluating hot carrier shifts during typical CMOS switching transients. Regime I is however the key to the “non-conducting” mode (VGS D 0), which can affect NFETs with short L in a quiescent off state. In any event, the regime I data are useful for extending the lower experimental energy limit of the observed Sit (E), as will be seen later. Data from only the first two regimes were considered in this section, to correspond to Eq.

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