Download Arbitrary Modeling of TSVs for 3D Integrated Circuits by Khaled Salah, Yehea Ismail, Visit Amazon's Alaa El-Rouby PDF
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This booklet provides a wide-band and know-how self reliant, SPICE-compatible RLC version for through-silicon vias (TSVs) in 3D built-in circuits. This version debts for numerous results, together with pores and skin impression, depletion capacitance and within reach touch results. Readers will reap the benefits of in-depth assurance of techniques and expertise corresponding to 3D integration, Macro modeling, dimensional research and compact modeling, in addition to closed shape equations for the via silicon through parasitics. thoughts coated are confirmed through the use of TSVs in functions similar to a spiral inductor and inductive-based communique method and bandpass filtering.
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Additional resources for Arbitrary Modeling of TSVs for 3D Integrated Circuits
351–354 11. C. Ryu, J. Lee, H. Lee, K. Lee, T. Oh, J. 215–220 12. M. Jang, C. Y. H. Cho, J. S. J. Lee, J. Yu, Development and evaluation of 3-D SiP with vertically interconnected through silicon vias (TSV), in Proc. 847–852 13. C. Ryu, J. S. Pak, Multi-stacked through-silicon-via effects on signal integrity and power integrity for application of 3-dimensional stacked-chip-package, in IEEE, 2009 14. W. W. Yoon, Q. Zhou, K. Pasad, V. H. Lau, High RF performance TSV silicon carrier for high frequency application, in Electronic Components and Technology Conference, 2008 15.
29) . 42 2 3D/TSV-Enabling Technologies 2D FPGA Configuration SRAM Configuration SRAM User Logic Circuit 3D FPGA User Logic Circuit Fig. 29 3D FPGA structure as compared to 2D FPGA DRAM1 Cell Decoder (0,1) DRAM0 Cell Banks (0,1) µp a µp b Fig. 2 3D Memory 3D-stacked memories can be implemented in several architectures. One possible architecture is simply using TSVs to connect dynamic random-access memory (DRAM) layers to the processor layer as depicted in Fig. 30a. Such memory architecture reduces the long memory access latency, but does not provide much bandwidth benefits as the individual memory structures in each layer are still traditional 2D memory structures.
28 Fig. 1 Electrical Modeling Challenges C Port2 The purpose of modeling interconnections is to extract equivalent circuits that describe the electrical characteristics of a given interconnection structure. A major difficulty in modeling 3D interconnections results from the need to obtain the entire coupling model of a large number of 3D interconnections. Furthermore, for accurate electrical design of 3D-ICs, including RF, analog, and digital submodules, the 3D interconnection model should cover a sufficiently wide frequency range.